TiC Films Formed by Multi-Stacking Process for Diamond Contact Metal Electrodes
TiC Films Formed by Multi-Stacking Process for Diamond Contact Metal Electrodes
复制标题
用于金刚石接触金属电极的多层堆叠工艺形成的 TiC 薄膜
DOI：
10.1149/05006.0335ecst
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
H. Iwai
中科院分区：
文献类型：
--
作者：
Yuki Tanaka;K. Kakushima;P. Ahmet;Y. Kataoka;K. Tsutsui;A. Nishiyama;N. Sugii;K. Natori;T. Hattori;S. Yamasaki;H. Iwai
在金刚石衬底上沉积多层Ti和C薄膜，然后退火，形成TiC薄膜。由于TiC与金刚石之间的反应被抑制，TiC电极获得了热稳定的接触特性。TiC薄膜的功函数为4.3eV。接触电阻率的一个数量级低于Ti/n-金刚石已获得。
TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.