Sputter process diagnostics by negative ions
Sputter process diagnostics by negative ions
复制标题
通过负离子进行溅射过程诊断
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
H. Biederman
中科院分区：
文献类型：
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作者：
M. Zeuner;H. Neumann;J. Žalman;H. Biederman
我们测量了硅在氧中反应溅射过程中负离子的能量分布。各种含氧负离子分别在阴极护套内或直接在溅射靶处形成。这些负离子在电场的作用下加速离开阴极，可以用面对溅射磁控管的质谱仪来检测。每个离子的来源可以通过能量分布中的峰结构来确定。此外，不同负离子的通量提供了氧化膜对靶物中毒的信息。
We measured the energy distributions of negative ions during reactive sputtering of silicon in oxygen. Various oxygen containing negative ions are formed in the cathode sheath or directly at the sputter target, respectively. These negative ions are accelerated away from the cathode by the electrical field, and can be detected using a mass spectrometer facing the sputter magnetron. The origin of each ion can be determined from peak structures in the energy distribution. Additionally the flux of different negative ions provides information on poisoning of the target by oxide films.