Optical and photorefractive properties of InP:Ti: a new photorefractive semiconductor.
Optical and photorefractive properties of InP:Ti: a new photorefractive semiconductor.
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InP:Ti 的光学和光折变特性：一种新型光折变半导体。
DOI：
10.1364/ol.14.001278
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发表时间：
1989
期刊：
影响因子：
3.6
通讯作者：
A. Glass
中科院分区：
文献类型：
--
作者：
D. Nolte;D. H. Olsen;E. Monberg;P. Bridenbaugh;A. Glass
研究了掺钛InP的光学和光折变特性。在半绝缘InP：Ti中首次观察到波长为1.06和1.32 μ m的四波混频。室温下的衍射效率为零施加的偏压是大于以前测量的效率为InP：Fe，因为没有双极光电导。光电导率观察到2微米，这提高了在更长的波长比以前探索的光折变混合的可能性。
The optical and photorefractive properties of Ti-doped InP are investigated. Four-wave mixing at wavelengths of 1.06 and 1.32 microm has been observed for the first time to our knowledge in semi-insulating InP:Ti. Room-temperature diffraction efficiencies for zero applied bias are larger than efficiencies measured previously for InP:Fe because of the absence of bipolar photoconductivity. Photoconductivity is observed out to 2 microm, which raises the possibility of photorefractive mixing at longer wavelengths than previously explored.