Pulsed laser deposition of crystalline LaB6 thin films
Pulsed laser deposition of crystalline LaB6 thin films
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DOI：
10.1016/j.apsusc.2005.01.071
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发表时间：
2005-07-15
影响因子：
6.7
通讯作者：
Craciun, D
中科院分区：
文献类型：
--
作者：
Craciun, V;Craciun, D
研究了用脉冲激光沉积(PLD)技术沉积LaB6薄膜。用X射线光电子能谱(XPS)、俄歇电子能谱(AES)、X射线衍射仪和反射率对薄膜的性能进行了表征。研究发现，只有当激光能量密度达到10J/cm(2)或更高，衬底温度超过800℃时，才能生长出结晶性薄膜。在850℃，残余真空度优于1×10(-6)Torr的条件下，获得了具有较强(100)织构的立方体LaB6薄膜(a=0.4157 nm)，薄膜表面光滑，表面粗糙度小于1.4 nm，质量密度约为4.88g/cm，接近理论密度4.71g/cm。X射线光电子能谱(XPS)和俄歇电子能谱(AES)研究表明，表面最外层的2-3 nm处含有大量的氧以及La-O和B-O键。一旦通过溅射去除了这一表面区，氧含量就下降到10%以下。(C)2005 Elsevier B.V.保留所有权利。
The deposition of LaB6 thin films by the pulsed laser deposition (PLD) technique was investigated. X-ray photoelectron and Auger electron spectroscopy (XPS, AES), X-ray diffraction and reflectivity were used to characterize the properties of the deposited films. It has been found that crystalline films could be grown only by using laser fluences around 10 J/cm(2) or higher and substrate temperatures in excess of 800 degrees C. Cubic LaB6 films (a = 0.4157 nm) exhibiting a strong (100) texture were deposited under a residual vacuum better than 1 X 10(-6) Torr at 850 degrees C. These films were smooth, with surface roughness values below 1.4 nm and mass densities around 4.88 g/cm, very close to the theoretical LaB6 density of 4.71 g/cm. XPS and AES investigations showed that the outermost 2-3 nm of the surface region contained a significant amount of oxygen and La-O and B-O bonds. Once this surface region was removed by sputtering, the oxygen content decreased to values below 10%. (c) 2005 Elsevier B.V. All rights reserved.