Transverse Magnetoresistivity Anisotropy Measurements and the Geometrical Size Effect in Nickel Thin Films
Transverse Magnetoresistivity Anisotropy Measurements and the Geometrical Size Effect in Nickel Thin Films
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DOI：
10.1063/1.1661360
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发表时间：
1972-04
影响因子：
3.2
通讯作者：
Ting Chen;V. Marsocci
中科院分区：
文献类型：
--
作者：
Ting Chen;V. Marsocci
在室温、液氮和液氦温度下测量了多晶和单晶镍膜的横向磁阻各向异性。对测量数据进行了退磁场效应的校正。根据修正后的结果估计了镍薄膜的尺寸效应。结果表明，这些尺寸效应依赖于材料的电子结构，不能用现有的薄膜电子传导理论来解释。
The transverse magnetoresistivity anisotropy in both polycrystalline and single‐crystal nickel films have been measured at room, liquid‐nitrogen, and liquid‐helium temperatures. A correction for the demagnetization field effect has been performed on the measured data. The size effects in nickel thin films have been estimated from the corrected results. It is found that these size effects depend on the electronic structure of the material and cannot be explained by the present theories of the electron conduction phenomena in thin films.