Semiconductor material assessment by scanning electron microscopy *
Semiconductor material assessment by scanning electron microscopy *
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通过扫描电子显微镜评估半导体材料*
DOI：
10.1111/j.1365-2818.1977.tb00032.x
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发表时间：
1977
影响因子：
2
通讯作者：
S. Davidson
中科院分区：
文献类型：
--
作者：
S. Davidson
扫描电子显微镜的阴极发光和束致电流工作模式在半导体材料的高分辨率表征中的应用已经取得了相当大的进展。这些技术可以用来测量小到一微米的半导体区域的电阻率、载流子浓度、迁移率、成分、扩散长度、少数载流子寿命、发光效率、位错密度和温度等参数。详细讨论了限制测量范围和测量精度的理论和实验因素。最近的实验结果说明了每一种技术。
Considerable strides have been made in the application of the cathodoluminescent and beam‐induced current modes of operation of the scanning electron microscope to the high resolution characterization of semiconductor materials. These techniques can be used to measure parameters such as resistivity, carrier concentration, mobility, composition, diffusion length, minority carrier lifetime, luminescence efficiency, dislocation density and temperature from regions of semiconductors as small as one micron across. The theoretical and experimental factors which limit the range of values over which measurements are possible and the accuracy attainable are discussed in detail. Each technique is illustrated by recent experimental results.