Step Structure Transformation of Si(001) Surface Induced by Current
Step Structure Transformation of Si(001) Surface Induced by Current
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电流诱导的Si(001)表面阶梯结构转变
DOI：
10.1143/jjap.31.1164
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发表时间：
1992
影响因子：
1.5
通讯作者：
Hitoshi Yasunaga Hitoshi Yasunaga
中科院分区：
文献类型：
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作者：
A. Natori;Hiroki Fujimura Hiroki Fujimura;Hitoshi Yasunaga Hitoshi Yasunaga
本文研究了直流电流作用下Si（001）表面的电畴转变机制，阐明了临界台阶间距的来源。Si（001）表面2×1畴和1×2畴之间的转换是随着台阶的移动而进行的，这是由于吸附原子在台阶上的迁移引起的。吸附原子上的均匀驱动力被假定为由直流电流的供应引起的。的步骤动力学处理的发展BCF（伯顿，卡布雷拉和弗兰克）的理论，考虑到三个效果：贡献的漂移通量的吸附原子，各向异性的扩散常数，和排斥步骤之间的相互作用。第一效应和第二效应的耦合导致了畴的转变。台阶间相互作用引起的漂移通量和后向扩散通量的平衡条件决定了临界间距。数值计算了台阶组态的时间演化，很好地解释了观测到的行为。
The domain conversion mechanism on a Si(001) surface induced by DC current is investigated, and the origin of the critical step spacing is clarified. The conversion between 2×1 and 1×2 domains on the Si(001) surface proceeds with the movement of each step, caused by the transport of adatoms across the terrace. The uniform driving force on adatoms is assumed to be induced by the supply of DC current. The step kinetics is treated by developing the BCF (Burton, Cabrera and Frank) theory to take account of the three effects: contribution of the drift flux of adatoms, anisotropy of a diffusion constant, and repulsive interaction between steps. The domain conversion is induced by the coupling of the first and second effects. The balance condition between the drift flux and the backward diffusion flux caused by the repulsive step-step interaction determines the critical spacing. The time evolution of step configuration is calculated numerically, and it explains well the observed behaviour.
T. Masujima：“固相光声 EXAFS”Jpn。
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