High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates
High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates
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在 InAs 衬底上生长的高性能 InAs/GaAsSb 超晶格长波长红外光电探测器
DOI：
10.1088/1361-6641/aa6377
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发表时间：
2017
影响因子：
1.9
通讯作者：
Chen JX
中科院分区：
文献类型：
--
作者：
Xu Zhicheng;Chen Jianxin;Wang Fangfang;Zhou Yi;He Li;Chen JX
本文报道了生长在InAs衬底上的高性能长波长InAs/GaAs0.09Sb0.91II型超晶格红外探测器。InAs层厚度从14到24 ML的超晶格光电二极管在6到12.5 μm的范围内显示出50%的截止波长，而晶格失配保持小于4.0× 10− 4，无需任何额外的界面层来平衡应变。量子效率谱显示振荡特性，这是由于在高掺杂的InAs缓冲层的等离子体效应。通过模拟计算，得到了InAs上SL的吸收系数为1800 cm-1，少子扩散长度为10 μm。光电二极管的截止波长为12.5 μm，在76 K和52 K下的峰值探测率分别为7.4× 10 10 cm Hz 1/2 W− 1和2.6× 10 11 cm Hz 1/2 W− 1。
We demonstrated high performance long wavelength InAs/GaAs 0.09 Sb 0.91 type-II superlattices infrared photo-detectors grown on InAs substrates. Superlattices photodiodes with InAs layer thickness from 14 to 24 ML showed 50% cutoff wavelength from 6 to 12.5 μm while the lattice-mismatch was kept smaller than 4.0× 10− 4 without any additional interface layers for strain balance. Quantum efficiency spectra showed oscillating characteristics which were attributed to the plasma effect in the highly doped InAs buffer layers. The absorption coefficient of 1800 cm− 1 and diffusion length of 10 μm of minority carriers in the SLs on InAs have been obtained through simulation. A photodiode exhibited a 12.5 μm cutoff wavelength with a peak detectivity of 7.4× 10 10 cm Hz 1/2 W− 1 and 2.6× 10 11 cm Hz 1/2 W− 1 at 76 K and 52 K, respectively.