Electron accepting naphthalene bisimide ligand architectures for modulation of π–π stacking in nanocrystal hybrid materials
Electron accepting naphthalene bisimide ligand architectures for modulation of π–π stacking in nanocrystal hybrid materials
复制标题
用于调节纳米晶体杂化材料中α-β堆积的电子接受萘双酰亚胺配体结构
DOI:
10.1039/d0nh00359j
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发表时间:
2020
影响因子:
9.7
通讯作者:
Murray, Christopher B.
中科院分区:
文献类型:
--
作者:
Elbert, Katherine C.;Taheri, Mohammad M.;Gogotsi, Natalie;Park, Jungmi;Baxter, Jason B.;Murray, Christopher B.
Investigation of charge transfer in quantum dot (QD) systems is an area of great interest. Specifically, the relationship between capping ligand and rate of charge transfer has been studied as a means to optimize these materials. To investigate the role of ligand interaction on the QD surface for electron transfer, we designed and synthesized a series of ligands containing an electron accepting moiety, naphthalene bisimide (NBI). These ligands differ in their steric bulk: as one allows for π–π stacking between the NBI moieties at high surface coverages, while the other does not, allowing for a direct comparison of these effects. Once grafted onto QDs, these hybrid materials were studied using UV-Vis, fluorescence, and transient absorption spectroscopy. Interestingly, the sample with the fastest electron transfer was not the sample with the most NBI π–π stacking, it was instead where these ligands were mixed amongst oleic acid, breaking up H-aggregates between the NBI groups.