Electron accepting naphthalene bisimide ligand architectures for modulation of π–π stacking in nanocrystal hybrid materials

Electron accepting naphthalene bisimide ligand architectures for modulation of π–π stacking in nanocrystal hybrid materials
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用于调节纳米晶体杂化材料中α-β堆积的电子接受萘双酰亚胺配体结构

DOI:
10.1039/d0nh00359j
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发表时间:
2020
期刊:
影响因子:
9.7
通讯作者:
Murray, Christopher B.
Murray, Christopher B.
中科院分区:
材料科学2区
文献类型:
--
作者:
Elbert, Katherine C.;Taheri, Mohammad M.;Gogotsi, Natalie;Park, Jungmi;Baxter, Jason B.;Murray, Christopher B.

文献摘要

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量子点体系中的电荷转移是一个非常有趣的研究领域。具体而言,封端配体和电荷转移速率之间的关系进行了研究,作为优化这些材料的一种手段。为了研究量子点表面的配体相互作用对电子转移的作用,我们设计并合成了一系列含电子接受基团萘二酰亚胺(NBI)的配体。这些配体的空间体积不同:一种配体允许NBI部分在高表面覆盖率下进行π-π堆叠,而另一种配体则不允许,从而可以直接比较这些效应。一旦接枝到量子点上,这些杂化材料进行了研究,使用紫外-可见光谱,荧光,和瞬态吸收光谱。有趣的是,具有最快电子转移的样品不是具有最多NBI π-π堆积的样品,而是这些配体在油酸中混合,破坏NBI基团之间的H-聚集体。
Investigation of charge transfer in quantum dot (QD) systems is an area of great interest. Specifically, the relationship between capping ligand and rate of charge transfer has been studied as a means to optimize these materials. To investigate the role of ligand interaction on the QD surface for electron transfer, we designed and synthesized a series of ligands containing an electron accepting moiety, naphthalene bisimide (NBI). These ligands differ in their steric bulk: as one allows for π–π stacking between the NBI moieties at high surface coverages, while the other does not, allowing for a direct comparison of these effects. Once grafted onto QDs, these hybrid materials were studied using UV-Vis, fluorescence, and transient absorption spectroscopy. Interestingly, the sample with the fastest electron transfer was not the sample with the most NBI π–π stacking, it was instead where these ligands were mixed amongst oleic acid, breaking up H-aggregates between the NBI groups.