Lateral Buckling Mechanics in Silicon Nanowires on Elastomeric Substrates
Lateral Buckling Mechanics in Silicon Nanowires on Elastomeric Substrates
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DOI：
10.1021/nl901450q
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发表时间：
2009-09-01
期刊：
影响因子：
10.8
通讯作者：
Rogers, John A.
中科院分区：
文献类型：
--
作者：
Ryu, Seung Yoon;Xiao, Jianliang;Rogers, John A.
我们描述了弹性体衬底上的硅纳米线（SiNWs）的屈曲力学的实验和理论研究。该系统涉及随机取向的硅纳米线生长在硅晶片上使用既定的程序，然后转移和组织成对齐的阵列上的预应变板的聚（二甲基硅氧烷）（POMS）。释放预应变导致非线性机械屈曲过程，其将初始线性SINW转变为正弦（即，“波浪形”）形状。与这些波相关的位移位于衬底的平面内，这与先前在硅纳米带和碳纳米管的类似系统中观察到的行为不同，在这些系统中，运动发生在平面外。理论分析表明，与这种面内屈曲相关的能量略低于表征SiNW的几何形状和机械性能的面外情况。一个精确的测量的杨氏模量的个别硅纳米线，类似于170和类似于110 GPa的范围内的线在这里检查，出现从理论分析的实验观察比较。一个简单的应变计建立使用硅纳米线在这些波浪形的几何形状展示了一个潜在的应用领域。
We describe experimental and theoretical studies of the buckling mechanics in silicon nanowires (SiNWs) on elastomeric substrates. The system involves randomly oriented SiNWs grown using established procedures on silicon wafers, and then transferred and organized into aligned arrays on prestrained slabs of poly(dimethylsiloxane) (POMS). Releasing the prestrain leads to nonlinear mechanical buckling processes that transform the initially linear SINWs into sinusoldal (i.e., "wavy") shapes. The displacements associated with these waves lie in the plane of the substrate, unlike previously observed behavior in analogous systems of silicon nanoribbons and carbon nanotubes where motion occurs out-of-plane. Theoretical analysis indicates that the energy associated with this in-plane buckling is slightly lower than the out-of-plane case for the geometries and mechanical properties that characterize the SiNWs. An accurate measurement of the Young's modulus of individual SiNWs, between similar to 170 and similar to 110 GPa for the range of wires examined here, emerges from comparison of theoretical analysis to experimental observations. A simple strain gauge built using SiNWs in these wavy geometries demonstrates one area of potential application.