Uniaxial magnetic anisotropy in epitaxial Fe/MgO films on GaAs(001)
Uniaxial magnetic anisotropy in epitaxial Fe/MgO films on GaAs(001)
复制标题
DOI：
10.1016/j.jmmm.2014.02.022
复制
发表时间：
2014-06
影响因子：
2.7
通讯作者：
Jun Woo Choi;Hyung-jun Kim;Kyungho Kim;A. Scholl;Joonyeon Chang
中科院分区：
文献类型：
--
作者：
Jun Woo Choi;Hyung-jun Kim;Kyungho Kim;A. Scholl;Joonyeon Chang
研究了在MgO缓冲GaAs（001）衬底上生长的Fe薄膜的磁性和结构特性。使用透射电子显微镜的结构分析表明，当MgO在高温（~350 °C）下生长时，Fe/MgO/GaAs系统是完全外延的。利用磁滞回线测量和磁畴成像发现外延Fe/MgO/GaAs系统沿着Fe[100]//GaAs[1 <$10]存在双重单轴磁各向异性。而在室温下沉积的MgO上生长的Fe则表现为边界离散的非晶岛状结构，没有发现磁各向异性。
Magnetic and structural properties of Fe films grown on MgO buffered GaAs(001) substrates were investigated. Structural analysis using a transmission electron microscope shows that the Fe/MgO/GaAs system is fully epitaxial when MgO is grown at high temperature (~350 °C). A two-fold uniaxial magnetic anisotropy along the Fe[100]//GaAs[1̄10] was found for the epitaxial Fe/MgO/GaAs system using magnetic hysteresis loop measurements and magnetic domain imaging. However Fe grown on room temperature deposited MgO shows amorphous island morphology with discrete boundary, and no magnetic anisotropy was found.