Magnetic tunnel junctions with an equiatomic quaternary CoFeMnSi Heusler alloy electrode
Magnetic tunnel junctions with an equiatomic quaternary CoFeMnSi Heusler alloy electrode
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DOI：
10.1063/1.5002763
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发表时间：
2018-01-29
影响因子：
4
通讯作者：
Mizukami, Shigemi
中科院分区：
文献类型：
--
作者：
Bainsla, Lakhan;Suzuki, Kazuya Z.;Mizukami, Shigemi
研究了具有等原子四元 CoFeMnSi Heusler 和 CoFe 合金电极的 MgO 基磁隧道结 (MTJ) 中的隧道磁阻 (TMR)。采用超高真空磁控溅射技术制备了外延MTJ堆叠结构，其中CoFeMnSi电极具有全B2和部分L2(1)有序晶体结构。对于 MTJ，在室温和 10 K 下观察到的最大 TMR 比率分别为 101% 和 521%。在低温 (LT) 下也观察到了 TMR 比率对偏置电压的较大依赖性，这与过去在 Co2MnSi Heusler 合金基 MTJ 中观察到的情况类似。 LT 时相对较大 TMR 比的物理起源根据 CoFeMnSi 的半金属性进行了讨论。由 AIP 出版社出版。
Tunnel magnetoresistance (TMR) in MgO-based magnetic tunnel junctions (MTJs) with equiatomic quaternary CoFeMnSi Heusler and CoFe alloy electrodes is studied. The epitaxial MTJ stacking structures were prepared using ultrahigh-vacuum magnetron sputtering, where the CoFeMnSi electrode has a full B2 and partial L2(1) ordering crystal structure. Maximum TMR ratios of 101% and 521% were observed at room temperature and 10 K, respectively, for the MTJs. The large bias voltage dependence of the TMR ratio was also observed at low temperature (LT), as similarly observed in Co2MnSi Heusler alloy-based MTJs in the past. The physical origins of this relatively large TMR ratio at LT were discussed in terms of the half-metallicity of CoFeMnSi. Published by AIP Publishing.