Silicon carbide-based photonic crystal nanocavities for ultra-broadband operation from infrared to visible wavelengths
Silicon carbide-based photonic crystal nanocavities for ultra-broadband operation from infrared to visible wavelengths
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DOI：
10.1063/1.3647979
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发表时间：
2011-11
影响因子：
4
通讯作者：
Shota Yamada;B. Song;T. Asano;S. Noda
中科院分区：
文献类型：
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作者：
Shota Yamada;B. Song;T. Asano;S. Noda
为了在单个晶圆上实现在红外和可见波长范围内工作的纳米光子器件，我们研究了碳化硅（SiC）基光子晶体纳米腔的光学特性。通过制造晶格常数范围为 150 至 600 nm 的纳米腔，我们通过实验证明了单个 SiC 晶圆上各个腔的谐振波长范围为 550 至 1450 nm。此外，这种超宽带操作揭示了薄 SiC 晶圆的材料色散，在上述广泛的波长范围内，估计为 nSiC = 2.34 + 9.18 × 104/λ2。
To realize nanophotonic devices that operate in both the infrared and visible wavelength ranges on a single wafer, we investigated the optical characteristics of silicon carbide (SiC)-based photonic crystal nanocavities. By fabricating nanocavities with lattice constants ranging from 150 to 600 nm, we experimentally demonstrated resonant wavelengths of individual cavities ranging from 550 to 1450 nm on a single SiC wafer. Furthermore, this ultra-broadband operation reveals the material dispersion of the thin SiC wafer, which is estimated as nSiC = 2.34 + 9.18 × 104/λ2, over the wide range of aforementioned wavelengths.