Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer
Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer
复制标题
利用 Ga(In)NAs 势垒层和空间层改善 1.55 μm GaInNAs/GaAs 多量子阱的光学性能
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
J. David
中科院分区：
文献类型：
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作者：
Huiyun Liu;M. Hopkinson;P. Navaretti;M. Gutiérrez;J. Ng;J. David
本文报道了1.55 μ mGaInNAs/GaAs多量子阱异质结结构。当GaInNAs量子阱中的氮浓度高达3%时，GaInNAs/GaNAs多量子阱结构的光致发光效率随氮浓度的增加而增加，而不是随氮浓度的增加而增加，从而实现了1.5 μm以上的室温发光。利用GaInNAs四元BSL进一步增强了GaInNAs多量子阱的光致发光强度，并显著减小了量子阱的发射线宽。GaInNAs BSL的这些效应可以从改善GaInNAs量子阱的结构性质的角度来理解，这是由于量子阱/BSL界面处的应变减小所致。这些结果为进一步开发1.55 μm附近的GaAs基发光光源提供了一种可行的方法。
We present the 1.55 μm GaInNAs/GaAs multiple quantum well (QW) heterostructures with a GaNAs or a GaInNAs barrier and space layer (BSL). The stronger improvement of photoluminescence efficiency has been observed with increasing N concentration in a GaNAs BSL, instead of increasing N composition in GaInNAs QWs, to achieve room-temperature emission above 1.5 μm for GaInNAs/GaNAs multiple QW structure, when the nitrogen concentration in GaInNAs QW is as high as 3%. A further enhancement of photoluminescence intensity and a remarkable reduction of emission linewidth of GaInNAs multiple QWs have been demonstrated by using a GaInNAs quaternary BSL. These effects of a GaInNAs BSL could be understood in terms of the improvement of structural properties of GaInNAs QWs, resulting from the reduction of the strain at QW/BSL interface. These results present a variable approach to further developing GaAs-based light sources in the telecommunication-wavelength range near 1.55 μm.