Ultra-low threshold InAs/GaAs quantum dot microdisk lasers on planar on-axis Si (001) substrates
Ultra-low threshold InAs/GaAs quantum dot microdisk lasers on planar on-axis Si (001) substrates
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DOI：
10.1364/optica.6.000430
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发表时间：
2019-04
期刊：
影响因子：
10.4
通讯作者：
Taojie Zhou;M. Tang;Guohong Xiang;X. Fang;Xiu Liu;Boyuan Xiang;S. Hark;Mickael Martin;M. Touraton;T. Baron;Ying Lu;Siming Chen;Huiyun Liu;Zhaoyu Zhang
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文献类型：
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作者：
Taojie Zhou;M. Tang;Guohong Xiang;X. Fang;Xiu Liu;Boyuan Xiang;S. Hark;Mickael Martin;M. Touraton;T. Baron;Ying Lu;Siming Chen;Huiyun Liu;Zhaoyu Zhang
在平面同轴 Si (001) 上单片集成高效 III-V 发光源已被认为是实现硅基光子集成电路 (PIC) 的一项使能技术。采用量子点 (QD) 材料的微盘激光器领域正在获得巨大的发展动力，因为它允许大规模可扩展、简化的硅基 PIC 制造，并且具有成本效益。在这里，我们提出了在同轴 Si (001) 衬底上单片生长的 InAs/GaAs QD 微盘激光器，在室温下连续波光泵浦下具有超低激光阈值。展示了小直径 (D) 约 2 μm 和亚波长尺度 (D∼1.1 μm) 微盘激光器的激光特性，激光阈值低至 ∼3 μW。微盘激光器具有超低功耗和小占地面积的有前途的激光特性，代表着在硅平台上大规模、低成本集成激光源的重大进步。
Monolithic integration of efficient III–V light-emitting sources on planar on-axis Si (001) has been recognized as an enabling technology for realizing Si-based photonic integrated circuits (PICs). The field of microdisk lasers employing quantum dot (QD) materials is gaining significant momentum because it allows massive-scalable, streamlined fabrication of Si-based PICs to be made cost effectively. Here, we present InAs/GaAs QD microdisk lasers monolithically grown on on-axis Si (001) substrate with an ultra-low lasing threshold at room temperature under continuous-wave optical pumping. The lasing characteristics of microdisk lasers with small diameter (D) around 2 μm and sub-wavelength scale (D∼1.1 μm) are demonstrated, with a lasing threshold as low as ∼3 μW. The promising lasing characteristics of the microdisk lasers with ultra-low power consumption and small footprint represent a major advance towards large-scale, low-cost integration of laser sources on the Si platform.