Highly stable QLEDs with improved hole injection via quantum dot structure tailoring
Highly stable QLEDs with improved hole injection via quantum dot structure tailoring
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高度稳定的 QLED，通过量子点结构定制改善空穴注入
DOI：
10.1038/s41467-018-04986-z
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发表时间：
2018-07-04
影响因子：
16.6
通讯作者：
Qian, Lei
中科院分区：
文献类型：
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作者：
Cao, Weiran;Xiang, Chaoyu;Qian, Lei
对于最先进的量子点发光二极管来说，虽然纳米氧化锌颗粒层可以提供有效的电子注入到量子点层中，但由于量子点的深价带，空穴传输材料通常不能保证足够的空穴注入。发展合适的空穴传输材料以匹配量子点的能级仍然是进一步提高器件效率和工作寿命的巨大挑战。在这里，我们展示了使用具有适合空穴注入的定制能带结构的量子点，具有更长的工作寿命的高性能量子点发光二极管。这些器件的T95工作寿命超过2300 h，初始亮度为1000 CD m−2，在100 CD m−2下的T50寿命超过2200,000 h，满足显示应用的工业要求。
For the state-of-the-art quantum dot light-emitting diodes, while the ZnO nanoparticle layers can provide effective electron injections into quantum dots layers, the hole transporting materials usually cannot guarantee sufficient hole injection owing to the deep valence band of quantum dots. Developing proper hole transporting materials to match energy levels with quantum dots remains a great challenge to further improve the device efficiency and operation lifetime. Here we demonstrate high-performance quantum dot light-emitting diodes with much extended operation lifetime using quantum dots with tailored energy band structures that are favorable for hole injections. These devices show aT95operation lifetime of more than 2300 h with an initial brightness of 1000 cd m−2, and an equivalentT50lifetime at 100 cd m−2of more than 2,200,000 h, which meets the industrial requirement for display applications.