Dissociation of the 1/3<-1101> Dislocation and Formation of the Anion Stacking Fault on the Basal Plane in α-Al2O3
Dissociation of the 1/3<-1101> Dislocation and Formation of the Anion Stacking Fault on the Basal Plane in α-Al2O3
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α-Al2O3中1/3<-1101>位错的解离与基面阴离子堆垛层错的形成
DOI：
10.1016/j.actamat.2015.02.033
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发表时间：
2015
期刊：
影响因子：
9.4
通讯作者：
Yuichi Ikuhara
中科院分区：
文献类型：
--
作者：
Eita Tochigi;Atsutomo Nakamura;Teruyasu Mizoguchi;Naoya Shibata;Yuichi Ikuhara
用原子分辨电子显微镜研究了Al_2O_3(α-Al_2O_3)(0 0 0 1)/1 1‘0&2°倾斜晶界中的位错结构。我们发现晶界基本上是由1/3[1‘1’1]、1/3[0 1‘1]和1/3[10 1’1]位错组成的周期性阵列，这些位错在(0 0 0 1)面上分为两个部分位错，其间有层错。原子分辨扫描电子显微镜分析表明，在负离子亚晶格上存在层错，这在氧化铝中尚未观察到。用第一性原理计算从理论上支持了稳定的(0 0 0 1)阴离子层错的存在。结合实验和理论结果，我们证明了1/3<；1‘01>；位错的离解反应及其伴生的层错。
Abstract Dislocation structures in the (0 0 0 1)/< 1 1¯ 0 0> 2° tilt grain boundary of alumina (α-Al 2 O 3) were investigated by atomic-resolution transmission electron microscopy (TEM). We found that the grain boundary basically consists of a periodic array of 1/3 [1¯ 1 0 1], 1/3 [0 1¯ 1 1], and 1/3 [10 1¯ 1] dislocations, and these dislocations were dissociated into two partial dislocations with a stacking fault in between on the (0 0 0 1) plane. Atomic-resolution scanning TEM analysis revealed that the stacking fault is present on the anion sublattice, which has not been observed in alumina so far. The presence of the stable (0 0 0 1) anion stacking faults was theoretically supported using a first-principles calculation. Combining experimental and theoretical results, we demonstrate the dissociation reactions of the 1/3< 1¯ 1 0 1> dislocation and the associated stacking fault.