Optical properties of dislocations in wurtzite ZnO single crystals introduced at elevated temperatures
Optical properties of dislocations in wurtzite ZnO single crystals introduced at elevated temperatures
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DOI：
10.1063/1.2977748
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发表时间：
2008-10-01
影响因子：
3.2
通讯作者：
Yao, T.
中科院分区：
文献类型：
--
作者：
Ohno, Y.;Koizumi, H.;Yao, T.
研究了在高温(923-1073K)塑性变形中故意引入任意数量(通常为10(9)-10(10)cm(-2))新鲜位错的纤锌矿氧化锌大块单晶的光学性质。形变样品在11K时表现出光子能量为3.100 eV和3.345 eV的激子发光，以及它们的LO声子复制品，光强度随位错密度的增加而增加。3.100和3.345 eV发射带热猝灭的激活能分别为0.30+/-0.1和0.05+/-0.01 eV，对应于与发射带相关的局域能级深度。能级的起源被认为是含有位错的点缺陷复合体。在高于923K的高温下引入位错，除了位错相关的发射带外，对发射带的强度没有影响。(C)2008年美国物理研究所。[DOI：10.1063/1.2977748]
Optical properties of wurtzite ZnO bulk single crystals in which an arbitrary number (typically 10(9)-10(10) cm(-2)) of fresh dislocations were introduced intentionally by the plastic deformation at elevated temperatures (923-1073 K) were examined. Deformed specimens showed excitonic light emission with photon energies of 3.100 and 3.345 eV, as well as their LO phonon replicas at 11 K. The light intensities increased with increasing dislocation density. The activation energy for a thermal quenching of the 3.100 or 3.345 eV emission band, which corresponds to the depth of the localized energy level associated with the emission band, was estimated to be 0.3 +/- 0.1 or 0.05 +/- 0.01 eV, respectively. The origin of the energy levels was proposed as point defect complexes involving dislocations. The introduction of the dislocations at the elevated temperatures above 923 K did not influence the intensities of the emission bands except the dislocation-related emission bands. (c) 2008 American Institute of Physics. [DOI:10.1063/1.2977748]