Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1−xCx:H for microbolometer applications
Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1−xCx:H for microbolometer applications
复制标题
用于微测辐射热计应用的等离子体增强化学气相沉积 a-Si:H 和 a-Si1−xCx:H 的电特性
DOI：
10.1063/1.4829013
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发表时间：
2013
影响因子：
3.2
通讯作者：
T. Jackson
中科院分区：
文献类型：
--
作者：
Hang;D. John;M. Lee;N. Podraza;T. Jackson
研究了采用等离子体增强化学气相沉积法制备的n型a-Si:H和a-Si1−xCx:H的电阻性微热计传感器材料的电学性能，包括电阻率、电阻温度系数（TCR）和归一化Hooge参数。用椭圆偏振光谱法测定了复介电函数谱（e = e1 + ie2）和结构。利用二维漂移-扩散模拟来了解TCR与1/f噪声的带尾斜率关系。
Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si1−xCx:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (e = e1 + ie2) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.