Single-parameter quantized charge pumping in high magnetic fields
Single-parameter quantized charge pumping in high magnetic fields
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DOI：
10.1063/1.3063128
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发表时间：
2008-11
影响因子：
4
通讯作者：
B. Kaestner;C. Leicht;Vyacheslavs Kashcheyevs;K. Pierz;U. Siegner;H. Schumacher
中科院分区：
文献类型：
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作者：
B. Kaestner;C. Leicht;Vyacheslavs Kashcheyevs;K. Pierz;U. Siegner;H. Schumacher
研究了强磁场中半导体量子点的单参数量子化电荷泵。量子点被限定在AlGaAs/GaAs异质结构中的两个顶栅之间。将振荡电压施加到栅极之一导致栅极特性中的泵浦电流平台，对应于每个周期整数倍电子的受控转移。在平行于平面的磁场中，高原变得更加明显，表明电流量化得到了改善。电流量子化持续到磁场，其中可以预期设备的全自旋极化。
We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected.