Development of PZT sputtering method for mass-production
Development of PZT sputtering method for mass-production
复制标题
开发用于量产的PZT溅射方法
DOI：
10.1016/s0169-4332(00)00716-9
复制
发表时间：
2001
期刊：
影响因子：
--
通讯作者：
N. Tani
中科院分区：
文献类型：
--
作者：
T. Masuda;Y. Miyaguchi;M. Tanimura;Y. Nishioka;K. Suu;N. Tani
铁电薄膜被广泛应用于非挥发性铁电随机存取存储器(FeRAM)。研究了用射频磁控溅射法沉积PZT薄膜的工艺。研究PZT薄膜中铅含量的稳定性、大尺寸(8in)薄膜厚度的均匀性是非常重要的。用于生产的溅射室的衬底和维护周期(处理颗粒)。实现了1000片硅片沉积的稳定性和5%的厚度均匀性。通过对溅射设备的改进，提高了屏蔽层的使用寿命，使其达到了较长的粒子突破寿命。
Ferroelectric thin films have been widely expected for nonvolatile ferroelectric random access memory (FeRAM) application. Production process of depositing Pb(Zr,Ti)O3(PZT) thin films has been developed by using RF-magnetron sputtering method. It is very important to study stability of Pb content in the PZT films, uniformity of film thickness on large (8in.) substrate and maintenance periodicity of the sputtering chamber (coping with particles) for the production. The stability for 1000 wafer deposition and the thickness uniformity of 5% were realized. Improving the sputtering equipment, the shield life until particle-break-out became long.