Graphene: Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC (Small 29/2016)
Graphene: Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC (Small 29/2016)
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石墨烯：Pb插层对SiC上外延石墨烯结构和电子性能的影响（小29/2016）
DOI：
10.1002/smll.201670142
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发表时间：
2016
期刊：
影响因子：
13.3
通讯作者：
Sugimoto Yoshiaki
中科院分区：
文献类型：
--
作者：
Yurtsever Ayhan;Onoda Jo;Iimori Takushi;Niki Kohei;Miyamachi Toshio;Abe Masayuki;Mizuno Seigi;Tanaka Satoru;Komori Fumio;Sugimoto Yoshiaki
在第3956页，A. Yurtsever及其同事展示了一种通过铅原子嵌入在SiC（0001）衬底上获得ap掺杂石墨烯层的新方法。发现Pb插层结构在环境条件下和高达1250 ℃的高温下是稳定的。结果表明，Pb在SiC上的嵌入可以极大地调节石墨烯的电子性质，这将有助于石墨烯在超导和自旋电子学等领域的应用。
On page 3956, A. Yurtsever and co‐workers demonstrate a novel method to obtain ap‐doped graphene layer on SiC (0001) substrate by Pb atom intercalation. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 C. It is shown that electronic properties of graphene can be greatly tuned by Pb intercalation on SiC, which can facilitate the use of graphene in the various fields such as superconductivity and spintronics.