Temperature dependence of free excitons in GaN
Temperature dependence of free excitons in GaN
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DOI：
10.1063/1.1509866
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发表时间：
2002-03
影响因子：
3.2
通讯作者：
D. C. Reynolds;J. Hoelscher;C. Litton;T. Collins
中科院分区：
文献类型：
--
作者：
D. C. Reynolds;J. Hoelscher;C. Litton;T. Collins
本研究中涉及的激子是纵向激子、自由激子和施主束缚激子（D0，X）。通过Varshni方程（Y. P. Varshni，Physica（Amsterdam）34，149（1967））。在相同的温度范围内，纵向激子的能量位置偏离Varshni方程的预测。纵向和横向模式的自由激子之间的分离先前已被报道。这种分离的一个组成部分是极化率，其具有温度依赖性。因此，纵向激子具有带隙温度依赖性，由Varshni方程预测，以及由于极化率的额外依赖性。这种温度依赖性已被Varshni方程，加上一个额外的线性和二次温度依赖项占。
The excitons involved in this study are the longitudinal and the Γ5 and Γ6 free excitons, as well as the donor bound exciton (D0,X). The temperature dependence of the energy positions of the Γ5, Γ6, and (D0,X) excitons are well accounted for by the Varshni equation (Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967)). In the same temperature range, the energy positions of the longitudinal excitons depart from the predictions of the Varshni equation. The separation between the longitudinal- and transverse-mode free excitons has been previously reported. One component of this separation is the polarizability, which has a temperature dependence. The longitudinal exciton therefore has a band-gap temperature dependence, predicted by the Varshni equation, as well as an additional dependence due to polarizability. This temperature dependence has been accounted for by the Varshni equation, plus an additional linear and a quadratic temperature dependent term.