High-performance transistors for bioelectronics through tuning of channel thickness.
High-performance transistors for bioelectronics through tuning of channel thickness.
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DOI：
10.1126/sciadv.1400251
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发表时间：
2015-05
期刊：
影响因子：
13.6
通讯作者：
Malliaras GG
中科院分区：
文献类型：
--
作者：
Rivnay J;Leleux P;Ferro M;Sessolo M;Williamson A;Koutsouras DA;Khodagholy D;Ramuz M;Strakosas X;Owens RM;Benar C;Badier JM;Bernard C;Malliaras GG
具有可调跨导的晶体管可以高质量记录人脑节律。尽管有机电化学晶体管（OECT）的简单制造和高性能引发了人们最近的兴趣，但其运行背后的基本机制在很大程度上仍未被探索。 OECT 使用与聚合物通道直接接触的电解质作为其器件结构的一部分。因此，它们可以轻松地与生物环境集成，目前用作生物电子学的放大换能器。据信，OECT 中会发生电解质和通道之间的离子交换，但这一过程的程度及其对器件特性的影响仍不清楚。我们表明，离子从电解质吸收到掺杂聚苯乙烯磺酸盐 (PEDOT:PSS) 的聚 (3,4-乙撑二氧噻吩) 薄膜中，可产生 39 F/cm3 的纯体积电容。这导致跨导对通道厚度的依赖性，这是我们用来展示人脑节律的高质量记录的新自由度。我们的研究结果将晶体管类别带到了最前沿，其中性能可以独立于器件尺寸进行调整，并为材料设计提供指导，从而实现最先进的晶体管性能。
Transistors with tunable transconductance allow high-quality recordings of human brain rhythms. Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their device structure. Hence, they offer facile integration with biological milieux and are currently used as amplifying transducers for bioelectronics. Ion exchange between electrolyte and channel is believed to take place in OECTs, although the extent of this process and its impact on device characteristics are still unknown. We show that the uptake of ions from an electrolyte into a film of poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) leads to a purely volumetric capacitance of 39 F/cm3. This results in a dependence of the transconductance on channel thickness, a new degree of freedom that we exploit to demonstrate high-quality recordings of human brain rhythms. Our results bring to the forefront a transistor class in which performance can be tuned independently of device footprint and provide guidelines for the design of materials that will lead to state-of-the-art transistor performance.