Silicon Nitride Waveguides with Intrinsic Single-Photon Emitters for Integrated Quantum Photonics
Silicon Nitride Waveguides with Intrinsic Single-Photon Emitters for Integrated Quantum Photonics
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DOI:
10.1021/acsphotonics.2c00750
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发表时间:
2022-05
期刊:
影响因子:
7
通讯作者:
Alexander Senichev;Samuel Peana;Zachariah O. Martin;O. Yesilyurt;Demid V. Sychev;A. Lagutchev;A. Boltasseva;V. Shalaev
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作者:
Alexander Senichev;Samuel Peana;Zachariah O. Martin;O. Yesilyurt;Demid V. Sychev;A. Lagutchev;A. Boltasseva;V. Shalaev
: The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) 1 provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the single-photon emission coupling into the waveguide mode. The observed emission coupling from these emitters is found to be in line with numerical simulations. The coupling of the single-photon emission to a waveguide mode is confirmed by second-order autocorrelation measurements of light outcoupled off the photonic chip by grating couplers. Fitting the second-order autocorrelation histogram yields 𝑔𝑔 ( 2 ) (0) = 0.35 ± 0.12 without spectral filtering or background correction with an outcoupled photon rate of 10 4 counts per second. This demonstrates the first successful coupling of photons from intrinsic single-photon emitters in SiN to monolithically integrated waveguides made of the same material. The results of our work pave the way toward the realization of scalable, technology-ready quantum photonic integrated circuitry efficiently interfaced with solid-state quantum emitters.