Fermion Chern‐Simons Theory and the Unquantized Quantum Hall Effect
Fermion Chern‐Simons Theory and the Unquantized Quantum Hall Effect
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费米子陈-西蒙斯理论和非量化量子霍尔效应
DOI：
10.1002/9783527617258.ch6
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
B. Halperin
中科院分区：
文献类型：
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作者：
B. Halperin
在20世纪80年代，强磁场中二维电子系统的实验和理论研究主要集中在整数和分数量子化霍尔效应上。然而，最近已经清楚的是，这些系统在偶数分母朗道能级填充分数附近也非常有趣，例如v= 1/2，其中量子化霍尔效应不会发生。已被证明对理解非量子化系统最有用的理论方法是费米子陈-西蒙斯理论[1 -81]，它本身是JK Jain开发的复合费米子图像的产物，用于描述分数量子化霍尔效应的最突出特征[9，lo]。然而，许多计算技术最初是由
During the 1980s, experimental and theoretical studies of two-dimensional electron systems in strong magnetic fields were focused on the integer and fractional quantized Hall effects. More recently, however, it has become clear that these systems are also extremely interesting in the vicinity of even-denominator Landau level filling fractions, such as v= 1/2, where the quantized Hall effect does not occur. The theoretical approach that has proved most useful for understanding the unquantized systems is the fermion Chern-Simons theory [l-81, itself an outgrowth of the composite fermion picture developed by JK Jain to describe the most prominent features of the fractional quantized Hall effect [9, lo]. However, many of the computational-techniques were originally developed by