Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides
Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides
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DOI：
10.1088/0268-1242/30/8/085018
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发表时间：
2015-07
影响因子：
1.9
通讯作者：
M. Wełna;R. Kudrawiec;Y. Nabetani;T. Tanaka;M. Jaquez;O. Dubon;K. Yu;W. Walukiewicz
中科院分区：
文献类型：
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作者：
M. Wełna;R. Kudrawiec;Y. Nabetani;T. Tanaka;M. Jaquez;O. Dubon;K. Yu;W. Walukiewicz
半导体矩阵上的带反交叉相互作用的效果进行了研究，为四个不同的稀氧化物材料系统：硫酸锌，ZnSeO，ZnTeO，和ZnCdTeO。主体材料的选择允许独立控制导带边缘和O能级之间的能量分离以及耦合参数。通过光反射和光吸收测量的跃迁能很好地解释了带反交叉模型的耦合参数从1.35 eV的硫酸锌增加到2.8 eV的ZnTeO和O和主机阴离子之间的电负性差呈近似线性关系。
The effect of a semiconductor matrix on the band anticrossing interaction is studied for four different dilute-oxide material systems: ZnSO, ZnSeO, ZnTeO, and ZnCdTeO. The choice of host material allows for independent control of the energy separation between the conduction band edge and the O energy level as well as the coupling parameter. The transition energies measured by photoreflectance and optical absorption are well explained by the band anticrossing model with the coupling parameter increasing from 1.35 eV for ZnSO to 2.8 eV for ZnTeO and showing approximately linear dependence on the electronegativity difference between O and the host anion.