Redox processes in silicon dioxide thin films using copper microelectrodes
Redox processes in silicon dioxide thin films using copper microelectrodes
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DOI：
10.1063/1.3662013
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发表时间：
2011-11
影响因子：
4
通讯作者：
S. Tappertzhofen;S. Menzel;I. Valov;R. Waser
中科院分区：
文献类型：
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作者：
S. Tappertzhofen;S. Menzel;I. Valov;R. Waser
尽管 SiO2 是典型的绝缘体，但我们通过循环伏安法研究了 30 nm 厚的二氧化硅薄膜界面处 Cu/Cu+ 氧化的电化学特性。这项研究揭示了阳极氧化过程以及随后注入 SiO2 层中的氧化铜离子的还原过程，特别关注氧化还原过程的动力学。我们估计了 SiO2 中铜离子的扩散系数和迁移率。研究结果使我们能够更深入地了解基于 Cu/SiO2 的非易失性存储器件的电阻切换过程中所涉及的过程。
Although SiO2 is a typical insulator, we demonstrate an electrochemical characteristic of the Cu/Cu+ oxidation at the interface with 30 nm thick silicon dioxide thin films studied by cyclic voltammetry. This study reveals the process of anodic oxidation and subsequent reduction of oxidized Cu ions injected in the SiO2 layer with special attention to the kinetics of the redox process. We estimated the diffusion coefficient and the mobility of Cu ions in SiO2. The results gain deeper insight in the processes involved during resistive switching of Cu/SiO2 based nonvolatile memory devices.