Uniform Wafer-Scale Chemical Vapor Deposition of Graphene on Evaporated Cu (111) Film with Quality Comparable to Exfoliated Monolayer
Uniform Wafer-Scale Chemical Vapor Deposition of Graphene on Evaporated Cu (111) Film with Quality Comparable to Exfoliated Monolayer
复制标题
DOI：
10.1021/jp3068848
复制
发表时间：
2012-11
影响因子：
3.7
通讯作者：
L. Tao;Jongho Lee;M. Holt;H. Chou;S. McDonnell;D. Ferrer;Matias G. Babenco;R. Wallace;S. Banerjee;R. Ruoff;D. Akinwande
中科院分区：
文献类型：
--
作者：
L. Tao;Jongho Lee;M. Holt;H. Chou;S. McDonnell;D. Ferrer;Matias G. Babenco;R. Wallace;S. Banerjee;R. Ruoff;D. Akinwande
本文展示了在标准氧化100 mm Si晶片上退火Cu（111）膜上生长的单层石墨烯，其质量高于现有报道。大面积拉曼映射表明单层石墨烯的高均匀性（>97%覆盖率），在整个晶片上具有不可测量的缺陷（>95%缺陷-可忽略）。这些结果的关键是蒸发的铜膜从非晶到（111）优选结晶的相变，这导致随后高质量石墨烯的生长，如通过X射线衍射和电子背散射衍射所证实的。值得注意的是，这种相变的铜膜上观察到的技术上普遍存在的硅晶片与标准的非晶热氧化物。采用改进的两步刻蚀转移工艺，保持了单层石墨烯的表面清洁和电学性能。在柔性聚酰亚胺膜上制造的石墨烯场效应晶体管在环境条件下实现了超过4900 cm 2/（V s）的峰值迁移率。
This article demonstrated monolayer graphene grown on annealed Cu (111) films on standard oxidized 100-mm Si wafers with higher quality than existing reports. Large area Raman mapping indicated high uniformity (>97% coverage) of monolayer graphene with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to (111) preferred crystalline, which resulted in subsequent growth of high quality graphene, as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, such phase transition of the copper film was observed on a technologically ubiquitous Si wafer with a standard amorphous thermal oxide. A modified two-step etching transfer process was introduced to preserve the clean surface and electrical property of transferred monolayer graphene. The fabricated graphene field effect transistor on a flexible polyimide film achieved peak mobility over 4900 cm2/(V s) at ambient condition.