Efficient power combining with D-band (110-170 GHz) InP Gunn devices in fundamental-mode operation
Efficient power combining with D-band (110-170 GHz) InP Gunn devices in fundamental-mode operation
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在基模操作中与 D 频段 (110-170 GHz) InP Gunn 器件相结合实现高效功率
DOI：
10.1109/75.650977
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
G. Haddad
中科院分区：
文献类型：
--
作者：
H. Eisele;G. Haddad
在金刚石热沉上的D波段InP古恩器件具有n/sup +/n/sup -/n/sup +/结构和有源区的梯度掺杂分布，在单独的谐振帽全高度波导腔中作为自激振荡器进行了测试。随后，匹配的振荡器功率组合在一个线双腔配置。组合射频（RF）功率水平在106 GHz时超过300 mW，在136 GHz时超过130 mW，在152 GHz时超过100 mW。这些RF功率水平是迄今为止报道的W波段和D波段频率下单个或功率组合古恩器件的最高功率水平。它们分别对应于大于80%、86%和大于100%的组合效率以及1.95%、1.25%和0.90%的总DC到RF转换效率。与单器件振荡器类似，这些功率组合古恩器件振荡器具有良好的可调谐性，相位噪声远低于-100 dBc/Hz（在500 kHz的载波频率下测量）。
D-band InP Gunn devices on diamond heat sinks with an n/sup +/n/sup -/n/sup +/ structure and a graded doping profile in the active region were tested as free-running oscillators in individual resonant-cap full-height waveguide cavities. Subsequently, matched oscillators were power-combined in an in-line dual-cavity configuration. Combined radio frequency (RF) power levels of more than 300 mW at 106 GHz, 130 mW at 136 GHz, and more than 100 mW at 152 GHz were achieved. These RF power levels are the highest reported to date from either single or power-combined Gunn devices at W-band and D-band frequencies. They correspond to combining efficiencies of more than 80%, 86%, and more than 100% as well as overall DC-to-RF conversion efficiencies of 1.95%, 1.25%, and 0.90%, respectively. Similar to oscillators with single devices, these power-combined Gunn device oscillators exhibit good tunability and a phase noise of well below -100 dBc/Hz, measured at a frequency off the carrier of 500 kHz.