Indium selenide nanowire phase-change memory
Indium selenide nanowire phase-change memory
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DOI：
10.1063/1.2793505
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发表时间：
2007-09-24
影响因子：
4
通讯作者：
Janes, David B.
中科院分区：
文献类型：
--
作者：
Yu, Bin;Ju, Sanghyun;Janes, David B.
制备了以硒化铟纳米线为可编程电阻元件的非易失性存储器件，研究了其阻性开关特性与电脉冲宽度和电压幅值的关系。纳米线存储器可以在高阻状态(类似于10(11)欧米茄)和低阻状态(类似于6x10(5)欧米茄)之间重复切换，这分别归因于非晶态和晶态。一旦设置到特定的状态，纳米线的电阻在高达2V的电压下测量是稳定的。这一观察表明，纳米线可以被编程为两种不同的状态，具有类似于10(5)的大开关电阻比，具有显著的非易失性信息存储的潜力。(C)2007年美国物理研究所。
Nonvolatile memory device using indium selenide nanowire as programmable resistive element was fabricated and its resistive switching property was studied as functions of electrical pulse width and voltage magnitude. The nanowire memory can be repeatedly switched between high-resistance (similar to 10(11) Omega) and low-resistance (similar to 6x10(5) Omega) states which are attributed to amorphous and crystalline states, respectively. Once set to a specific state, the nanowire resistance is stable as measured at voltages up to 2 V. This observation suggests that the nanowire can be programed into two distinct states with a large on-off resistance ratio of similar to 10(5) with significant potential for nonvolatile information storage. (C) 2007 American Institute of Physics.