Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures
Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures
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DOI：
10.1063/1.3656971
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发表时间：
2011-10-24
影响因子：
4
通讯作者：
Wang, T.
中科院分区：
文献类型：
--
作者：
Gong, Y. P.;Xing, K.;Wang, T.
对AlGaN/AlGaN多量子阱(MQW)进行了标准条带长度相关的光抽运测量，所用的AlGaN缓冲层采用两种不同的技术，即“GaN中间层”和“多孔AlN缓冲层”。得到了两个样品沿m轴和a轴的净模式增益，结果表明，用“GaN中间层”生长的AlN上的多量子阱净模式增益高于用“多孔AlN缓冲层”生长的AlN上的净模式增益。倒易空间映射测量表明，使用“GaN中间层”生长的AlN结构上的多量子阱结构是完全应变的，而使用“多孔AlN缓冲器”生长的AlN结构上的MQW结构是部分应变松弛的。两个样品沿m轴的净模式增益都高于沿a轴的净模式增益，这很合理地表明，形成腔面的最有利取向不是c面蓝宝石的-lt；11-20>；方向，c面蓝宝石上的III-氮化物通常沿着该方向解理。(C)2011年美国物理研究所。[DOI：10.1063/1.3656971]
Standard stripe-length dependent optical-pumping measurements have been performed on AlGaN/AlGaN multiple quantum wells (MQWs) on an AlN buffer grown using two different kinds of technologies, i.e., "GaN interlayer" and "porous AlN buffer." The net modal gains of the two samples along both m-and a-axis have been obtained, showing that the net modal gain of the MQWs on the AlN grown using "GaN interlayer" is higher than that on the AlN grown using "porous AlN buffer." Reciprocal space mapping measurements have indicated that the MQW structure on the AlN structure grown using "GaN interlayer" is fully strained while that on the AlN grown using "porous AlN buffer" is partially strain-relaxed. The net modal gain along the m-axis is higher than that along the a-axis in both samples, highly reasonably indicating that the most favourable orientation for forming the cavity facets is not < 11-20 > direction of c-plane sapphire, along which III-nitride on c-plane sapphire is normally cleaved. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656971]