Precision X-Ray Techniques for Semiconductors
Precision X-Ray Techniques for Semiconductors
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半导体精密 X 射线技术
DOI：
10.1146/annurev.ms.18.080188.001435
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
A. Macrander
中科院分区：
文献类型：
--
作者：
A. Macrander
在许多现代电子和光电子器件中都需要单晶半导体，并且在大多数情况下，为了可靠的性能，需要高度的完美。如果衬底-螺纹位错密度低，界面尖锐且没有错配位错，应力和应变小，从而可以防止翘曲和开裂，并且在大面积上外延结构均匀，则可以更合理地保证可靠器件的高产量。双晶和多晶x射线衍射是非常适合于确定晶体完美的强大技术，因为它们可以精确地监测半导体晶圆的固有x射线反射率。
Single crystal semiconductors are required in many modern electronic and optoelectronic devices, and in most instances a high degree of perfection is required for reliable performance. High yields of reliable devices can be more reasonably assured if substrate-threading dislocation densities are low, interfaces are sharp and free of misfit dislocations, stresses and strains are small and thus warpage and cracking are prevented, and epitaxial structures are uniform over large areas. Double crystal and multiple crystal x-ray diffraction are powerful techniques that are very well suited to the determination of crystalline perfection because they can precisely monitor the intrinsic x-ray reflectivity of a semiconductor wafer.