Point-contact spectroscopy on URu 2 Si 2
Point-contact spectroscopy on URu 2 Si 2
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URu 2 Si 2 点接触光谱
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
Farkhad G. Aliev
中科院分区：
文献类型：
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作者：
J. Rodrigo;F. Guinea;Sebastian Vieira;Farkhad G. Aliev
在URu_2Si_2 $单晶中沿着c轴方向进行了隧道和点接触实验。在低温扫描隧道显微镜中改变温度和接触尺寸进行实验。费米能级在60 K处产生共振.这种共振分裂，并成为不对称时，17.5 K相变是交叉。这些结果与U$^{4+}$离子组态和传导电子的Kondo类束缚态的存在是一致的。在转变之下，这些构型被四极有序的发展分裂。峰分离可以解释为序参量的直接测量。还报道了对多晶UAu_2Si_2$样品的测量结果，并对两种材料的行为进行了比较研究。
Tunnel and point contact experiments have been made in a URu$_2$Si$_2$ single crystal along the c-axis. The experiments were performed changing temperature and contact size in a low temperature scanning tunneling microscope. A resonance develops at the Fermi level at $Tsim 60$ K. This resonance splits and becomes asymmetric when the 17.5 K phase transition is crossed. These results are consistent with the existence of Kondo like bound states of the U$^{4+}$ ionic configurations and the conduction electrons. Below the transition, these configurations are split by the development of quadrupolar ordering. The peak separation can be interpreted as a direct measurement of the order parameter. Measurements on a policrystalline UAu_2Si_2$ sample are also reported, with a comparative study of the behavior of both materials.