Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer
Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer
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DOI：
10.1109/ted.2013.2294337
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发表时间：
2014-02-01
影响因子：
3.1
通讯作者：
Huang, Jian Jang
中科院分区：
文献类型：
--
作者：
Su, Liang-Yu;Lee, Finella;Huang, Jian Jang
通过在栅极下插入p型氮化镓层，证明了一种增强模式（e模式）高电子迁移率晶体管（HEMT）。本文研究了工艺流程和器件结构对电性能的影响。我们通过调整合金温度在p-GaN和沟道之间形成的二极管的内置电压，证明了阈值电压（V-th）为4.3 V。接下来，我们发现在这种HEMT结构中存在p-GaN层和二维电子气（2DEG）通道的平行传导路径。通过去除栅极-源区和栅极-漏区上方的p-GaN，电流传导从p-GaN迁移到2DEG通道。在我们的案例中，确保稳定正向电流电压操作的p-GaN剩余厚度的工艺窗口估计为10 +/- 5 nm。最后，在栅极触点下方放置p-GaN以耗尽表面泄漏电流，实现了击穿电压（V- bd）为1630 V的e型HEMT。
An enhancement-mode (E-mode) high-electron mobility transistor (HEMT) was demonstrated by inserting a p-type GaN layer underneath the gate electrode. The effects of process flows and device structures on the electrical properties are investigated in this paper. We demonstrated a threshold voltage (V-th) of 4.3 V by adjusting the built-in voltage of the diode formed between the p-GaN and channel by the alloy temperature. Next, we found the existence of parallel conduction paths of the p-GaN layer and 2-D electron gas (2DEG) channel in such a HEMT structure. By removing p-GaN above the gate-source and gate-drain regions, current conduction migrates from p-GaN to 2DEG channel. The process window of the p-GaN residual thickness to ensure a steady forward current-voltage operation was estimated to be 10 +/- 5 nm in our case. Finally, with the p-GaN underneath the gate contact to deplete surface leakage current, an E-mode HEMT with a breakdown voltage (V-BD) of 1630 V is achieved.