Properties of ITO thin films deposited by RF magnetron sputtering at elevated substrate temperature
Properties of ITO thin films deposited by RF magnetron sputtering at elevated substrate temperature
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DOI：
10.1016/s0921-5107(00)00477-3
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发表时间：
2000-08-07
期刊：
影响因子：
--
通讯作者：
Minarini, C
中科院分区：
文献类型：
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作者：
Terzini, E;Thilakan, P;Minarini, C
采用射频磁控溅射技术制备了氧化铟锡薄膜。放电功率密度从0.36到2w cm（-2）不等，可用纯氩气或氩气/氧混合物作为溅射气体。所有样品的衬底温度都保持在250℃。研究了薄膜的结晶行为与射频功率密度的关系。XRD分析表明，随着射频功率的增加，多晶结构的择优取向从（222）面转变为（400）面。晶体尺寸随射频功率的增大而增大。EPMA分析显示，[111]取向样品的O/In比[100]取向样品高。In/Sn比值随射频功率的增大和溅射气体由纯Ar变为Ar/O-2混合物而减小。光学带隙随着射频功率的增加而不断减小。霍尔效应测量显示了高沉积功率对电子迁移率退化的影响。在这项研究中，获得了8.6 × 10（-5）欧姆厘米（-1）的极低电阻率。指出了择优取向与薄膜性能之间的密切关系。(C) 2000 Elsevier Science S.A.版权所有
Indium tin oxide films have been deposited by RF magnetron sputtering technique. Discharge power density has been varied from 0.36 to 2 W cm(-2) and pure argon or argon/oxygen mixture have been utilised as sputtering gas. Substrate temperature has been kept at 250 degrees C for all the samples. Film's crystallisation behaviour has been investigated as a function of RF power density. XRD analysis revealed a change in preferential orientation of polycrystalline crystalline structure from (222) to (400) plane with the increase in RF power. Crystallite size was found to increase with the RF power. EPMA analysis revealed a higher O/In ratio in the [111] oriented samples than in the [100] oriented ones. In/Sn ratio, evaluated by ICP analysis, decreased with the increase in RF power and with the change of sputtering gas from pure Ar to Ar/O-2 mixture. Optical band gap was found continuously decreasing with the increase in RF power. Hall effect measurement showed the influence of high deposition power on the electron mobility degradation. A very low electrical resistivity of 8.6 x 10(-5) Ohm cm(-1) was achieved during this investigation. A close correlation between the preferential orientation and film properties has been pointed out. (C) 2000 Elsevier Science S.A. All rights reserved.