Polytype control and properties of AlN on silicon
Polytype control and properties of AlN on silicon
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硅基AlN的多型控制及性能
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
O. Ambacher
中科院分区：
文献类型：
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作者：
V. Cimalla;V. Lebedev;U. Kaiser;R. Goldhahn;C. Foerster;J. Pezoldt;O. Ambacher
在本文中，我们报告了通过碳化制备的 3C-SiC/Si(111) 伪衬底上立方多型 AlN 薄膜的光学和结构表征。我们发现，通过多型复制，3C-AlN 相可以稳定在“波浪形”3C-SiC(111) 表面上。另一方面，2H-AlN 是在原子级光滑的表面上生长的。 X 射线衍射和透射电子显微镜表明，立方 AlN 与六方夹杂物一起生长，含量高达 20%。红外区域的光谱椭偏仪显示了两种多型体的典型声子线。 TO 声子在 646 cm-1 处的出现证实了 3C-AlN 的存在。在紫外区域，能带结构的临界点被确定。对于 3C- 和 2H-AlN，在 Γ 点的第一次直接跃迁被确定为分别为 5.74 eV 和 6.16 eV。未检测到较低能量下的间接跃迁。 （© 2005 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
In this paper we report on the optical and structural characterisation of cubic polytype AlN thin films on 3C-SiC/Si(111) pseudo-substrates prepared by carbonisation. We have found that 3C-AlN phase can be stabilised on the “waved” 3C-SiC(111) surface by polytype replication. On the other hand, 2H-AlN was grown on atomically smooth surfaces. X-ray diffraction and transmission electron microscopy imply that the cubic AlN was grown along with hexagonal inclusions up to 20%. Spectroscopic ellipsometry in the infrared region show the typical phonon lines for the two polytypes. The appearance of the TO phonon at 646 cm–1 confirms the existence of 3C-AlN. In the ultraviolet region the critical points in the band structure were identified. For 3C- and 2H-AlN the first direct transition at the Γ-point was determined to be at 5.74 eV and 6.16 eV, respectively. No indirect transition at lower energies was detected. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)