Nano-dot arrays with a bit pitch and a track pitch of 25nm formed by EB writing for 1Tb/in2 storage
Nano-dot arrays with a bit pitch and a track pitch of 25nm formed by EB writing for 1Tb/in2 storage
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EB写入形成的位距和磁道距为25nm的纳米点阵列，用于1Tb/in2存储
DOI：
10.1016/j.mee.2007.01.119
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
H. Sone
中科院分区：
文献类型：
--
作者：
S. Hosaka;H. Sano;Masumi Shirai;Y. Yin;H. Sone
