Analog/RF performance of two tunnel FETs with symmetric structures
Analog/RF performance of two tunnel FETs with symmetric structures
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具有对称结构的两个隧道 FET 的模拟/射频性能
DOI：
10.1016/j.spmi.2017.07.013
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发表时间：
2017-11-01
影响因子：
3.1
通讯作者：
Wang, Qianqiong
中科院分区：
文献类型：
--
作者：
Chen, Shupeng;Liu, Hongxia;Wang, Qianqiong
本文分析了两种对称结构的隧道场效应晶体管的射频性能和模拟性能。利用Silvaco Atlas仿真研究了对称u型栅极隧道场效应晶体管（SUTFET）和对称隧道场效应晶体管（STFET）。分析了其基本电学特性以及与频率和模拟特性有关的参数。由于STFET具有较低的断态漏电流，因此具有较好的功耗性能。该晶体管获得了较大的工作电流（242 μ A/ μ m）、跨导（490 μ S/ μ m）、输出电导（494 μ S/ μ m）、增益带宽积（3.2 GHz）和截止频率（27.7 GHz）。这两种器件的仿真结果可以作为其模拟/射频应用的指导。(C) 2017 Elsevier Ltd.版权所有。
In this paper, the radio frequency and analog performance of two tunnel field-effect transistors with symmetric structures are analyzed. The symmetric U-shape gate tunnel field-effect transistor (SUTFET) and symmetric tunnel field-effect transistor (STFET) are investigated by Silvaco Atlas simulation. The basic electrical properties and the parameters related to frequency and analog characteristics are analyzed. Due to the lower off-state leakage current, the STFET has better power consumption performance. The SUTFET obtains larger operating current (242 mu A/mu m), transconductance (490 mu S/mu m), output conductance (494 mu S/mu m), gain bandwidth product (3.2 GHz) and cut-off frequency (27.7 GHz). The simulation result of these two devices can be used as a guideline for their analog/RF applications. (C) 2017 Elsevier Ltd. All rights reserved.