Water-Enhanced Debonding of Room-Temperature Bonded Silicon Wafers for Surface Protection Applications
Water-Enhanced Debonding of Room-Temperature Bonded Silicon Wafers for Surface Protection Applications
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用于表面保护应用的室温键合硅片的水增强脱键合
DOI：
10.1143/jjap.31.3483
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Ulrich Gösele Ulrich Gösele
中科院分区：
文献类型：
--
作者：
Q. Tong;Roman Gafiteanu Roman Gafiteanu;Ulrich Gösele Ulrich Gösele
硅晶片的可逆键合可用于保护镜面抛光的硅表面免受有机污染和颗粒的影响。本文将报道室温键合晶片对的脱粘实验。研究发现，水可以显著增加由插入在两个键合晶片之间的刀片产生的平衡裂纹长度。提出了一个简单的分析模型，该模型考虑了硅和水之间的界面能。结合“单片弯曲”的概念，预计室温可逆键合的晶片直径高达8英寸，可以很容易地通过使用这种技术分离。水增强剥离由于其与主流集成电路技术的兼容性而适合于工业应用。
Reversible bonding of silicon wafers can be used to protect mirror polished silicon surface against organic contamination and particles. The present paper will report on debonding experiments of room-temperature bonded wafer pairs. It is found the water can significantly enhance the equilibrium crack length created by a blade inserted between two bonded wafers. A simple analytical model of this phenomenon is proposed which takes into account the interfacial energy between silicon and water. Combined with the “one-wafer bent” concept, it is anticipated that room-temperature reversibly bonded wafers with diameters up to 8 inches can be easily separated by using this technique. Water-enhanced debonding appears to be suitable for industrial applications due to its compatibility with main stream integrated circuit technology.