Time evolution to CdCl 2 treatment on Cd-based solar cell devices fabricated by vapor evaporation
Time evolution to CdCl 2 treatment on Cd-based solar cell devices fabricated by vapor evaporation
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DOI：
10.1016/j.solener.2017.05.013
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发表时间：
2017-07
期刊：
影响因子：
6.7
通讯作者：
S. Chander;M. Dhaka
中科院分区：
文献类型：
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作者：
S. Chander;M. Dhaka
本文采用蒸气蒸发法制备了Cd基太阳电池器件，并用光电流-电压、电容-电压和量子效率等测试手段对器件的性能和表面形貌进行了分析，研究了Cd基太阳电池器件在热处理后的时间演化过程。对采用不同热处理时间的氯化镉后处理的镉镉太阳电池器件进行了分析。器件结构为ITO/CDS/CDTe/CDCl2/Cu-Au和FTO/CDS/CDZnTe/Cu-Au，其中，在后一种结构中，由于所用金属功函数与其价带位置的差异，避免了由于所用金属功函数和价带位置不同而导致的适合金属接触的问题，在后一种结构中，为了避免上层结构中开路电压的损失，采用了CDS层作为窗口层。性能特性表明，在氯化镉后热处理75min的条件下，薄膜电池的最大效率为7.13%，而薄膜电池的效率为8.11%，与文献报道的结果相比有所下降，但与现有器件相比，吸收层的材料消耗较小，仅为1.1μm，而典型的厚度为4~5μm，并且采用了低成本的制作技术。实验结果表明，在吸收层厚度较低的情况下，后处理时间对提高CdTe太阳能器件的性能有重要作用。
In this work, a study on the time evolution to post-CdCl2heat treatment on the Cd-based solar cell devices is undertaken where the devices were fabricated employing vapor evaporation method and analyzed by different measurement tools like light current-voltage, capacitance-voltage and quantum efficiency to investigate the performance along with surface morphology. CdTe-based solar devices were analyzed with the application of post-CdCl2heat treatment by varying annealing time. CdS layer was used as window layer with device structures ITO/CdS/CdTe/CdCl2/Cu-Au and FTO/CdS/CdZnTe/Cu-Au where in later structure, CdZnTe layer was used as absorber layer before the front contact to avoid open circuit voltage loss in the superstrate structure as CdTe-based thin film solar cells are suffered by the problem of suitable metal contact owing to difference between work function of used metal and position of valance band of CdTe layer. The performance characteristics reveal that the maximum efficiency for CdTe thin film solar cells is 7.13% with post-CdCl2heat treatment of 75 min while 8.11% efficiency is recorded for CdZnTe solar cell device which is low as compared to the reported value but relatively good as in the present devices, the material consumption of absorber layer is quite low i.e. only 1.1 μm instead of typical thickness of 4–5 μm as well as low cost fabrication technique is used. The experimental results reveal that the treatment duration of post-CdCl2plays an important role to enhance the performance of CdTe solar devices at lower thickness of the absorber layer.