Carrier Injection Characteristics of Organic Electroluminescent Devices
Carrier Injection Characteristics of Organic Electroluminescent Devices
复制标题
有机电致发光器件的载流子注入特性
DOI：
10.1143/jjap.33.2741
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发表时间：
1994
影响因子：
1.5
通讯作者：
Nobuhiro Azuma
中科院分区：
文献类型：
--
作者：
S. Egusa;A. Miura;Nobuhiro Azuma
通过测量M/Alq 3/Diamine/ SiO2/Si结构的位移电流特性，研究了组成有机电致发光（EL）器件M/Alq 3/Diamine/ITO的金属/有机（M/Alq 3）和有机/有机（Alq 3/ SiO2/Si）界面的结特性。M/Alq 3结被发现是电子和空穴注入，这取决于金属电极。对于Alq 3/Diamine界面，发现价带和导带存在两个带阶（Φ VB和Φ CB）。Φ VB不是很大，并且通过施加正向偏压，Diamine中的空穴能够穿过进入相邻的Alq 3层，但是Φ CB太大以至于Alq 3中的电子被阻挡。基于有机薄膜器件的特性由这些结决定的观点，我们讨论了载流子注入机制，并解释了有效的EL发射。
The junction characteristics of metal/organic (M/Org) and organic/organic (Org/Org) interfaces, composing an organic electroluminescent (EL) device, M/Alq3/Diamine/ITO, were studied by measuring the displacement current characteristics of M/Org/Org/ SiO2/Si structures. The M/Alq3 junction was found to be both electron and hole injective, depending on the metal electrode. As for the Alq3/Diamine interface, it was found that two band offsets (Φ VB and Φ CB) existed for respective valence and conduction bands. Φ VB was not very large, and holes in Diamine were able to pass through into the adjacent Alq3 layer by applying a forward-bias, but Φ CB was so large that the electrons in Alq3 were blocked. Based on the standpoint that characteristics of the organic thin-film devices are governed by those junctions, we discussed carrier-injection mechanism, and explain the efficient EL emission.