Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process
Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process
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低动能粒子工艺形成的外延硅薄膜的晶体结构分析
DOI：
10.1063/1.100919
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
H. Iwabuchi
中科院分区：
文献类型：
--
作者：
T. Ohmi;T. Ichikawa;T. Shibata;H. Iwabuchi
用低动能粒子法在350 °C下形成了高质量的外延硅薄膜，并对这些薄膜进行了一系列的晶体结构分析。有人发现，生长的薄膜的结晶度急剧改变的能量的Ar离子同时轰击生长的硅膜表面。通过高分辨率透射电子显微镜显示，具有最佳离子轰击能量的外延生长膜在界面和膜体中均无缺陷。
Formation of high quality epitaxial silicon films at 350 °C by a low kinetic energy particle process has been verified by a series of crystal structure analyses performed on these films. It was found that the crystallinity of a grown film is drastically changed by the energy of Ar ions concurrently bombarding the growing silicon film surface. The epitaxially grown film with an optimum ion bombardment energy is defect‐free both at the interface and in the bulk of the film as revealed by high‐resolution transmission electron microscopy.