Giant Ge-on-Insulator Formation by Si-Ge Mixing-Triggered Liquid-Phase Epitaxy
Giant Ge-on-Insulator Formation by Si-Ge Mixing-Triggered Liquid-Phase Epitaxy
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DOI：
10.1143/apex.2.045503
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发表时间：
2009-04-01
影响因子：
2.3
通讯作者：
Tanaka, Masanori
中科院分区：
文献类型：
--
作者：
Miyao, Masanobu;Tanaka, Takanori;Tanaka, Masanori
采用籽晶横向液相外延（L-LPE）技术，成功地生长出了长度为400 μ m的巨单晶绝缘体上锗（GOI）。在SiO（2）覆盖的Si衬底上获得了高质量的（100）、（110）和（111）取向单晶。提出了一种基于硅锗混合引起的凝固温度梯度和生长前沿潜热引起的热梯度的机制。石英衬底上的附加实验很好地支持了Si-Ge混合作为Ge的巨大L-LPE的触发器的重要性。这一过程开辟了具有高电子和空穴迁移率的Ge基全耗尽场效应晶体管的可能性。(C)2009日本应用物理学会
Formation of giant single-crystalline Ge-on-insulator (GOI) with 400 pm length is demonstrated by using seeding lateral liquid-phase epitaxy (L-LPE). High quality (100), (110), and (111) oriented single-crystals are obtained on Si substrates covered with SiO(2). A mechanism based on the solidification temperature gradient due to Si-Ge mixing and the thermal gradient due to latent heat at the growth front is proposed. An additional experiment on quartz substrates well supports the importance of Si-Ge mixing as a trigger for giant L-LPE of Ge. This process opens up the possibility of Ge-based fully-depleted field-effect transistors with high electron and hole mobilities. (C) 2009 The Japan Society of Applied Physics