Characterization of HfSiON gate dielectrics using monoenergetic positron beams
Characterization of HfSiON gate dielectrics using monoenergetic positron beams
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DOI：
10.1063/1.2178657
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发表时间：
2006-03
影响因子：
3.2
通讯作者：
A. Uedono;K. Ikeuchi;T. Otsuka;K. Shiraishi;K. Yamabe;S. Miyazaki;N. Umezawa;A. Hamid;T. Chikyow;T. Muramatsu;R. Suzuki;S. Inumiya;S. Kamiyama;Y. Akasaka;Y. Nara;K. Yamada
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文献类型：
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作者：
A. Uedono;K. Ikeuchi;T. Otsuka;K. Shiraishi;K. Yamabe;S. Miyazaki;N. Umezawa;A. Hamid;T. Chikyow;T. Muramatsu;R. Suzuki;S. Inumiya;S. Kamiyama;Y. Akasaka;Y. Nara;K. Yamada
用单能正电子束研究了氮化对Si衬底上原子层沉积HfSiOx薄膜开路体积的影响。对于HfSiOx，由于无定形结构中固有的开放体积，正电子从俘获态中消失。在离子氮化后，当氮浓度约为20at.%时，开放体积的大小减小。然而，在氮化后热处理(PNA)(1050°C，5s)后，观察到开放体积的扩张。我们发现，随着HfSiOx中氮浓度的增加，开放体积的大小增加。开孔体积大小的变化归因于开孔体积对氮的捕获，以及在PNA过程中氮进入HfSiOx无定形基质中。我们还用x射线光电子能谱和第一性原理计算研究了氮在HfSiOx中的作用。
The impact of nitridation on open volumes in thin HfSiOx films fabricated on Si substrates by atomic layer deposition was studied using monoenergetic positron beams. For HfSiOx, positrons were found to annihilate from the trapped state due to open volumes which exist intrinsically in an amorphous structure. After plasma nitridation, the size of open volumes decreased at a nitrogen concentration of about 20at.%. An expansion of open volumes, however, was observed after postnitridation annealing (PNA) (1050°C, 5s). We found that the size of open volumes increased with increasing nitrogen concentration in HfSiOx. The change in the size of open volumes was attributed to the trapping of nitrogen by open volumes, and an incorporation of nitrogen into the amorphous matrix of HfSiOx during PNA. We also examined the role of nitrogen in HfSiOx using x-ray photoelectron spectroscopy and first principles calculations.