Novel Type of Synaptic Transistors Based on a Ferroelectric Semiconductor Channel
Novel Type of Synaptic Transistors Based on a Ferroelectric Semiconductor Channel
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基于铁电半导体通道的新型突触晶体管
DOI：
10.1021/acsami.9b23595
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发表时间：
2020-06-03
影响因子：
9.5
通讯作者：
Chen, Qing
中科院分区：
文献类型：
--
作者：
Tang, Bin;Hussain, Sabir;Chen, Qing
三端突触晶体管是神经形态计算芯片的基本单元，可以克服传统冯诺依曼计算的瓶颈。到目前为止，大多数三端突触晶体管都是利用电介质层来改变沟道的状态，从而模仿突触行为。为此，需要特殊的介电层，如离子液体、固体电解质或铁电绝缘体，这些都难以小型化和集成化。在这里，我们报告了一种新型的突触晶体管使用二维铁电半导体，即，alpha-In 2 Se 3作为沟道材料首次模拟突触行为。单棘波反应、成对棘波反应和多棘波反应等基本的突触行为已被实验证实。最重要的是，我们的晶体管的常规栅极电介质材料可以促进突触晶体管的小型化和批量制造。结果表明，基于二维铁电半导体的三端突触晶体管在神经形态系统中具有很好的应用前景。
Three-terminal synaptic transistors are basic units of neuromorphic computing chips, which may overcome the bottleneck of conventional von Neumann computing. So far, most of the three-terminal synaptic transistors use the dielectric layer to change the state of the channel and mimic the synaptic behavior. For this purpose, special dielectric layers are needed, such as ionic liquids, solid electrolytes, or ferroelectric insulators, which are difficult for miniaturization and integration. Here, we report a novel type of synaptic transistors using a two-dimensional ferroelectric semiconductor, i.e., alpha-In2Se3, as the channel material to mimic the synaptic behavior for the first time. The essential synaptic behaviors, such as single-spike response, paired-spike response, and multispike response have been experimentally demonstrated. Most importantly, the conventional gate dielectric material of our transistors may facilitate the miniaturization and batch manufacture of synaptic transistors. The results indicate that the three-terminal synaptic transistors based on two-dimensional ferroelectric semiconductors are very promising for neuromorphic systems.