Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
复制标题
GaAs 基板上多层堆叠的 InAs/InGaAs 量子点产生长波长激光
DOI：
10.1063/1.124873
复制
发表时间：
1999
影响因子：
4
通讯作者：
D. Bimberg
中科院分区：
文献类型：
--
作者：
A. Zhukov;A. Kovsh;N. Maleev;S. Mikhrin;V. Ustinov;A. F. Tsatsul'nikov;M. Maximov;B. V. Volovik;D. A. Bedarev;Y. Shernyakov;P. Kop’ev;Z. Alferov;N. Ledentsov;D. Bimberg
覆盖有薄 InGaAs 层的 InAs 量子点 (QD) 阵列被用作通过分子束外延在 GaAs 基板上生长的二极管激光器的有源区域。这种异质结构中基态跃迁的波长在 1.3 μm 范围内。在基于单层量子点的激光器中，由于基电平增益不足，激光通过激发态进行。三个 QD 平面的堆叠可防止增益饱和，并通过具有相对较高的微分效率 (>50%) 的 QD 基态，在室温下产生低阈值（在大面积 1.9 毫米长条带中为 85 A/cm2）长波长 (1.25 μm) 激光。
An InAs quantum dot (QD) array covered by a thin InGaAs layer was used as the active region of diode lasers grown by molecular beam epitaxy on GaAs substrates. The wavelength of the ground-state transition in such heterostructures is in the 1.3 μm range. In the laser based on the single layer of QDs, lasing proceeds via the excited states due to insufficient gain of the ground level. Stacking of three QD planes prevents gain saturation and results in a low threshold (85 A/cm2 in broad-area 1.9-mm-long stripe) long-wavelength (1.25 μm) lasing at room temperature via the QD ground state with relatively high differential efficiency (>50%).