Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs (111)A and (111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy.
Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs (111)A and (111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy.
复制标题
通过金属有机氯化氢气相外延研究 GaAs (111)A 和 (111)B 表面上 GaN 生长的衬底取向依赖性。
DOI：
10.1143/jjap.39.l149
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发表时间：
2000
影响因子：
1.5
通讯作者：
H. Seki
中科院分区：
文献类型：
--
作者：
Y. Kumagai;A. Koukitu;H. Seki
研究发现，在 550℃ 下在 GaAs（111）A 表面上通过金属有机氯化氢气相外延（MOHVPE）生长的 50 nm 厚的 GaN 缓冲层即使在随后在 NH3 环境中加热至 1000℃ 后也没有劣化，而在 GaAs（111）B 表面上生长缓冲层时会形成大量针孔。此外，砷（As）通过针孔从 GaAs 衬底上发生严重的解吸。扫描电子显微镜 (SEM) 和 X 射线衍射 (XRD) 分析证实，在 GaAs (111)A 表面上 550°C 生长的 50 nm 厚的 GaN 缓冲层上，可以在 1000°C 下生长具有镜面表面的单晶六方 GaN 层。 GaN (0002) 面的 ω 模式扫描的半峰全宽 (FWHM) 为 1450 角秒。光致发光 (PL) 测量显示，室温下在 363.1 nm 处有尖锐的带边发射，半高宽为 96 meV。
It was found that a 50-nm-thick GaN buffer layer grown by metalorganic hydrogen chloride vapor-phase epitaxy (MOHVPE) at 550°C on a GaAs (111)A surface did not deteriorate even after subsequent heating in an NH3 ambient up to 1000°C, whereas numerous pinholes were formed when the buffer layer was grown on a GaAs (111)B surface. In addition, serious arsenic (As) desorption from the GaAs substrate occurred through the pinholes. A single crystal hexagonal GaN layer with a mirror-like surface can be grown at 1000°C on the 50-nm-thick GaN buffer layer grown at 550°C on the GaAs (111)A surface, as confirmed by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The full-width at half maximum (FWHM) of the ω mode scan for the GaN (0002) plane was 1450 arcsec. Photoluminescence (PL) measurement showed a sharp band-edge emission at 363.1 nm with a FWHM of 96 meV at room temperature.