Clear correspondence between magnetoresistance and magnetization of epitaxially grown ordered FeRh thin films
Clear correspondence between magnetoresistance and magnetization of epitaxially grown ordered FeRh thin films
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DOI：
10.1063/1.3556754
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发表时间：
2011-04-01
影响因子：
3.2
通讯作者：
Taniyama, Tomoyasu
中科院分区：
文献类型：
--
作者：
Suzuki, Ippei;Naito, Tomoyuki;Taniyama, Tomoyasu
研究了在MgO(001)衬底上生长的CsCl型有序FeRh外延薄膜的磁阻和磁化强度随温度和薄膜厚度的变化。在380K附近，所有FeRh薄膜都表现出明显的从反铁磁态到铁磁态的一级磁相变。伴随着场感应磁相变的FeRh薄膜的场相关磁阻的大的负变与磁化强度的平方M-2有很好的比例关系。结果表明，磁阻主要由传导电子与局域磁矩之间的S-d交换作用引起的自旋相关散射引起。(C)2011年美国物理研究所。[DOI：10.1063/1.3556754]
Magnetoresistance and magnetization of the CsCl-type ordered FeRh epitaxial thin films grown on MgO(001) substrates are investigated as a function of temperature and film thickness. All the films show a clear first-order magnetic phase transition from the antiferromagnetic state to the ferromagnetic state at around 380 K. A large negative variation in the field-dependent magnetoresistance of the FeRh thin films, which is accompanied by the field-induced magnetic phase transition, is found to be well scaled with the magnetization squared M-2. The results indicate that the magnetoresistance primarily arises from spin-dependent scattering through the s-d exchange interactions between conduction electrons and the localized magnetic moments. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556754]