Growth of SiC Nanowires from NiSi Solution
Growth of SiC Nanowires from NiSi Solution
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DOI：
10.1021/cg701101j
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发表时间：
2009-01-01
影响因子：
3.8
通讯作者：
Pan, Yi
中科院分区：
文献类型：
--
作者：
Wu, Renbing;Yang, Guangyi;Pan, Yi
我们提出了一种简单的熔融溶液策略，用于从 NiSi 溶液中生长高产的 SiC 纳米线。发现反应过程中充氩前的生长温度和基础真空对产物生长的形貌有显着影响。考虑到NiSi熔体中Ni的作用以及可能存在的微量氧的参与，结合固-液-固成核反应和气-液-固纳米线生长过程，讨论了SiC纳米线的形成。还用拉曼光谱研究了纳米线。这种简单且经济的方法可以扩展到合成其他一维纳米结构。
We present a simple melt solution strategy for the growth of high-yield SiC nanowires out of NiSi solution. The growth temperature and base vacuum before filling argon during the reaction are found to have a significant effect on the morphology of the product growth. Taking into consideration the action of Ni in the NiSi melt and the possible participation of a tiny amount of oxygen, the formation of SiC nanowires is discussed by a combination of the solid-liquid-solid reaction for nucleation and the vapor-liquid-solid process for nanowire growth. The nanowires were also investigated with Raman spectroscopy. Such a simple and economical method may be extended to synthesize other one-dimensional nanostructures.